Temperature dependent Hall effect measurements were made on Na-contaminated and uncontaminated epitaxialp-typeCuIn1−xGaxSe2films. Na was introduced by diffusion into as-deposited samples using both NaOH andNa2Seas sources. Na concentrations were measured using secondary ion mass spectroscopy by comparison to an implanted standard. Films contaminated with Na from either source were found to have much lower compensating donor densities than as-deposited films. Oxygen and other impurities were not found to be necessary to produce this effect although some changes with Se content were observed. These were independent of the Na effect. ©1997 American Institute of Physics.