A two‐dimensional microtopography‐etch simulation using Monte Carlo methods presented earlier is used to simulate various reactive‐ion etch profiles. The simulation models the topography of an arbitrary, periodic semiconductor surface during plasma‐assisted or reactive‐ion etching. A plasma‐assisted etch process can be dominated by a physical (ion bombardment) mechanism, a chemical (free radical) mechanism or a physical/chemical interaction mechanism. Alternately recombinant surface chemistry can also determine the final etch profile. Examples of profiles generated under these three conditions are presented.