600 fs 10.6 &mgr;m infrared pulse generation with radiation‐damaged GaAs reflection switch
作者:
A. Y. Elezzabi,
J. Meyer,
M. K. Y. Hughes,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 4
页码: 402-404
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114036
出版商: AIP
数据来源: AIP
摘要:
Ultrafast infrared laser pulses at 10.6 &mgr;m as short as 600±200 fs have been produced using optical semiconductor switching. This is achieved by using GaAs damaged with a 180 keV H+dose of 1×1016cm−2as an optical–optical switch. Cross‐correlation measurements are used to obtain the pulse shapes. We find that the generated infrared reflectivity pulse widths are proportional to the H+ion dose to the power −0.4. This allows a precise control over the generated pulse durations. ©1995 American Institute of Physics.
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