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Electron beam induced crystallization of a Ge‐Au amorphous film

 

作者: Long Ba,   Yong Qin,   Ziqin Wu,  

 

期刊: Journal of Applied Physics  (AIP Available online 1996)
卷期: Volume 80, issue 11  

页码: 6170-6174

 

ISSN:0021-8979

 

年代: 1996

 

DOI:10.1063/1.363691

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An amorphous Ge‐Au(a‐Ge‐Au) film prepared by vacuum deposition was studiedinsituand irradiated by an electron beam in a transmission electron microscope. The amorphous Ge‐Au film can be crystallized rapidly and locally by electron beam irradiation, forming polycrystalline metastable Ge0.4Au0.6tetragonal phase and then decomposing to polycrystalline Ge and polycrystalline Au at increased irradiation dose. The results suggest that the crystallization ofa‐GeAu film, the formation of Ge0.4Au0.6and the decomposition of the metastable Ge0.4Au0.6are dependent on the temperature rise of the irradiation process. ©1996 American Institute of Physics.

 

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