In-plane alignedPr6O11buffer layers by ion-beam assisted pulsed laser deposition on metal substrates
作者:
V. Betz,
B. Holzapfel,
D. Raouser,
L. Schultz,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 20
页码: 2952-2954
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120226
出版商: AIP
数据来源: AIP
摘要:
Biaxially aligned praseodymium oxide(Pr6O11)thin films were prepared by ion-beam assisted laser deposition on mechanically polished metal alloy substrates. A low divergence rf plasma source was used as an assisting source. Deposited films showed (001) oriented film growth with a strong biaxial alignment in the film plane. The degree of in-plane orientation dependent on ion-to-atom ratio and ion bombardment angle was studied. Planar ion channeling along the {110} planes is used to explain the observed alignment features. At an ion-to-atom ratio of 0.17 and an ion incident angle of 60°, in-plane orientations of 16° full width at half-maximum were obtained. Due to the low lattice mismatch (0.3&percent;) toYBa2Cu3Oxfilms, the material could be an alternative to theYSZ/CeO2buffer layer system currently used for high critical current carrying superconducting tapes. ©1997 American Institute of Physics.
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