Silicon‐to‐silicon direct bonding method
作者:
M. Shimbo,
K. Furukawa,
K. Fukuda,
K. Tanzawa,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 8
页码: 2987-2989
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337750
出版商: AIP
数据来源: AIP
摘要:
It was found that strong bonding takes place when a pair of clean, mirror‐polished silicon surfaces are contacted at room temperature after hydrophilic surface formation. Bonding strength reaches the fracture strength of silicon bulk after heating above 1000 °C. Electric resistivity at the interface is less than 10−6&OHgr;/cm2. Bondingp‐type silicon ton‐type silicon forms a diode. The reaction between silanol groups formed on the surface may cause the bonding force. Heating above 1000 °C was thought to diffuse oxygen to inside the silicon bulk, forming an epitaxial‐like lattice continuity at the interface.
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