Homoepitaxial film growth maintaining primary surface structures of Si substrates was investigated by using the reactive ion beam deposition method proposed recently. This method uses ionized species of reactive SiH4gas controlled in the low‐energy region of less than 500 eV. At 100–150 eV, homoepitaxial film growth on Si(111) and Si(100) maintaining their primary 7×7 and two‐domain 2×1 surface structures, respectively, can be achieved at the low temperatures of 650 and 600 °C, respectively. In addition, oxygen impurities on substrate surfaces, due to imperfect substrate cleaning and recontamination caused by residual gases in a growth chamber before film growth, were successfully reduced at 600 °C by irradiating the 100‐eV controlled ionized species onto them.