Ion‐induced radical production on surfaces during deposition of hydrogenated amorphous carbon
作者:
Y. Yamashita,
K. Katayose,
H. Toyoda,
H. Sugai,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 7
页码: 3735-3737
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346287
出版商: AIP
数据来源: AIP
摘要:
In a methane/argon discharge used for deposition of hydrogenated amorphous carbon (a‐C@B:H), energetic ion bombardment yields radicals on solid surfaces by two mechanisms: (i)fragmentation of hydrocarbon ions at their impact on the surface and (ii)sputtering of the already depositeda‐C:H film. To discriminate between these two mechanisms, the emission intensity of CH(A‐X) in the vicinity of a negatively biased electrode was measured as a function of the ion impact energy. The threshold energy for yielding the excited CH radical was found to be ∼2 eV for fragmentation and ∼80 eV for sputtering. The fragmentation yield is much larger on a metal surface than ona‐C:H layer. The sputtering yield dominates over the fragmentation yield for the high impact energy(>150 eV).
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