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Ion‐induced radical production on surfaces during deposition of hydrogenated amorphous carbon

 

作者: Y. Yamashita,   K. Katayose,   H. Toyoda,   H. Sugai,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 68, issue 7  

页码: 3735-3737

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.346287

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In a methane/argon discharge used for deposition of hydrogenated amorphous carbon (a‐C@B:H), energetic ion bombardment yields radicals on solid surfaces by two mechanisms: (i)fragmentation of hydrocarbon ions at their impact on the surface and (ii)sputtering of the already depositeda‐C:H film. To discriminate between these two mechanisms, the emission intensity of CH(A‐X) in the vicinity of a negatively biased electrode was measured as a function of the ion impact energy. The threshold energy for yielding the excited CH radical was found to be ∼2 eV for fragmentation and ∼80 eV for sputtering. The fragmentation yield is much larger on a metal surface than ona‐C:H layer. The sputtering yield dominates over the fragmentation yield for the high impact energy(>150 eV).

 

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