Stable electroluminescence from reverse biasedn‐type porous silicon–aluminum Schottky junction device
作者:
S. Lazarouk,
P. Jaguiro,
S. Katsouba,
G. Masini,
S. La Monica,
G. Maiello,
A. Ferrari,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 12
页码: 1646-1648
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115892
出版商: AIP
数据来源: AIP
摘要:
We report the realization of a bright and stable electroluminescent Schottky diode based on aluminum‐porous silicon junction. White light, visible in normal daylight, is emitted when a reverse bias is applied to the device, promoting the junction breakdown. The device has a fast (100 ns) rise time of the light emission. An excellent stability, tested over more than one month of continuous operation at a high bias level, is achieved by the complete encapsulation of the active porous silicon under a transparent alumina layer. The external power efficiency of light emission is 0.01%. ©1996 American Institute of Physics.
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