Violet light emitting SrS/SrCl:Eu thin‐film electroluminescent devices
作者:
W. Kong,
S. Ahmed,
J. Ferguson,
R. Solanki,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 1
页码: 7-9
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115514
出版商: AIP
数据来源: AIP
摘要:
Emission of bright (over 9 cd/m2) violet light centered at 404 nm has been achieved from SrS:Eu thin‐film electroluminescent (EL) devices. The brightness has remained stable after several hours of operation. The source of this light is believed to be the 5d–4ftransition of Eu2+in the SrCl2host, which is formed near the ZnS/SrS interfaces within the sandwich structure of the EL devices. Similar device structures were also utilized to produce ultraviolet EL emission at 367 nm from SrCl2:Ce3+layers. These devices were grown via atomic layer epitaxy. ©1995 American Institute of Physics.
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