Stress generation in thin Cu‐Ti films in vacuum and hydrogen
作者:
C. Apblett,
P. J. Ficalora,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 8
页码: 4431-4432
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348370
出版商: AIP
数据来源: AIP
摘要:
Thin bilayer films of copper metal on titanium were sputter deposited on oxidized silicon wafers and annealed in vacuum and hydrogen ambients. Annealing in vacuum caused the bilayers to fail in tension, while the hydrogen annealed films did not fail. This observation is explained as stress generated due to crystal lattice volume changes and thermal expansion coefficients.
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