Metalorganic molecular-beam-epitaxy-grownIn0.77Ga0.23As/InGaAsmultiple quantum well lasers emitting at 2.07 &mgr;m wavelength
作者:
Manabu Mitsuhara,
Matsuyuki Ogasawara,
Mamoru Oishi,
Hideo Sugiura,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 24
页码: 3106-3108
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121561
出版商: AIP
数据来源: AIP
摘要:
We report the growth of a four-period multiple quantum well (MQW) structure with 115-Å-thick,+1.65&percent;strained wells by metalorganic molecular beam epitaxy and its application to 2 &mgr;m wavelength lasers. Transmission electron microscopy and photoluminescence measurements reveal that the structural and optical properties of MQW are sensitive to the barrier strain: the values of barrier strain required for MQW with both flat barrier-well interfaces and strong photoluminescence fall within a small range from−0.17&percent;to+0.14&percent;.The double-crystal x-ray diffraction pattern of the MQW remains unchanged before and after annealing at 620 °C for 2.5 h. Buried heterostructure lasers fabricated using metalorganic vapor phase epitaxy regrowth have an emission wavelength of 2.07 &mgr;m under a continuous operation current of 120 mA at 55 °C. ©1998 American Institute of Physics.
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