Effects of indium doping on crystalline qualities of GaAs on Si by molecular beam epitaxy
作者:
I. Ohbu,
M. Ishino,
T. Mozume,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 4
页码: 396-397
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100973
出版商: AIP
数据来源: AIP
摘要:
The effects of In doping on crystalline qualities are demonstrated in the heteroepitaxy of GaAs on Si grown by molecular beam epitaxy. The etch pit density of the GaAs layers doped with In at 8×1017cm−3decreased by a factor of 7 compared with undoped GaAs layers. Dark regions observed in electron beam induced current images became small by In doping. The improvement of the crystalline qualities was also verified by Raman spectroscopy.
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