Intrinsic asymmetry between the [011] and [011̄]crystallographic directions in the In0.52Al0.48As/InP matched system
作者:
F. Peiró,
A. Cornet,
J. R. Morante,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 5
页码: 2057-2063
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588133
出版商: American Vacuum Society
关键词: ALUMINIUM ARSENIDES;DISLOCATIONS;INDIUM ARSENIDES;INDIUM PHOSPHIDES;MOLECULAR BEAM EPITAXY;SILICON ADDITIONS;STACKING FAULTS;TEMPERATURE DEPENDENCE;THIN FILMS;(In,Al)As;InP:Si
数据来源: AIP
摘要:
We have examined by transmission electron microscopy In0.48Al0.52As layers grown by molecular beam epitaxy on (100) InP substrates. The characterization of the nature of the crystal defects (dislocations and stacking faults) observed in the layers, and the study of their asymmetric distribution in the 〈011〉 directions point towards the differentiation of two mechanisms for defect nucleation and therefore towards two models explaining the observed anisotropy depending on the growth temperature (Tg). Then, for lowTg(300 °C) we have observed a {11̄1}‐microtwinned structure whose origin has been explained taking into account the limited kinetics of III atoms during the growth and the differences in the propagation speed of the surface steps during the molecular beam epitaxy growth. For growth temperatures in the 440–530 °C range, the defect densities decrease monotonically, being threading dislocations and stacking faults on the (11̄1) and (111̄) planes the prevalent type of defects. The asymmetry of fault densities between the {11̄1} and {111} planes have been discussed on the basis of the different mobilities of the partial dislocations bordering the faults.
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