Intraband absorption in the 8–12 &mgr;m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
作者:
Q. D. Zhuang,
J. M. Li,
H. X. Li,
Y. P. Zeng,
L. Pan,
Y. H. Chen,
M. Y. Kong,
L. Y. Lin,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 25
页码: 3706-3708
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122870
出版商: AIP
数据来源: AIP
摘要:
Normal-incident infrared absorption in the 8–12-&mgr;m-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 &mgr;m is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. ©1998 American Institute of Physics.
点击下载:
PDF
(111KB)
返 回