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Intraband absorption in the 8–12 &mgr;m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

 

作者: Q. D. Zhuang,   J. M. Li,   H. X. Li,   Y. P. Zeng,   L. Pan,   Y. H. Chen,   M. Y. Kong,   L. Y. Lin,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 73, issue 25  

页码: 3706-3708

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.122870

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Normal-incident infrared absorption in the 8–12-&mgr;m-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 &mgr;m is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. ©1998 American Institute of Physics.

 

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