Elements from groups IB, IIIB, VB, and VIIB have been added to crystals of Hg(1−x)Cd(x)Te grown using the accelerated crucible rotation technique. Assessment on both as‐grown and annealed (in Hg vapor) samples was carried out using Hall effect measurements to establish the electrical activity and stability of each dopant. Chemical analysis by atomic absorption spectroscopy and laser scan mass spectrometry determined the total levels of dopants in each crystal. The behavior of dopants in these crystals is compared to that found in Bridgman and epitaxial material and discussed in terms of the stoichiometry of melts and crystals at the growth temperature. It is concluded that group VB and VIIB elements are prevented from occupying Te sites when there is a high Hg vacancy concentration present during growth. Gold, which is inactive in Bridgman material, is found to be an active acceptor in a crystal grown using the accelerated crucible rotation technique. Group IB and IIIB elements are acceptors and donors, respectively, on metal sites irrespective of stoichiometry.