Adaptive-learning neuron circuits using ferroelectric thin films
作者:
Kwang-Ho Kim,
Hiroshi Ishiwara,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1994)
卷期:
Volume 5,
issue 2
页码: 89-95
ISSN:1058-4587
年代: 1994
DOI:10.1080/10584589408019332
出版商: Taylor & Francis Group
关键词: ferroelectric film;MFSFET;neuron circuit;RTA process;partial polarization
数据来源: Taylor
摘要:
Adaptive-learning neuron circuits are reviewed, in which a pulse frequency modulation (PFM) system is used and the interval of output pulses is changed through the learning process. Key devices of the circuits are MFSFETs (Metal Ferroelectric Semiconductor Field Effect Transistors). They are used for representing the synaptic weights of neurons and the polarity of the films is gradually changed by applying input pulses to the gates. In order to produce PFM signals, circuit using a UJT (unijunction transistor) is discussed. As a preliminary experiment for realization of MFSFETs, the electrical properties of metal ferroelectric metal (MFM) capacitor using sol-gel derived PZT films are discussed.
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