Two‐bandpass fiber‐optic radiometry for monitoring the temperature of photoresist during dry processing
作者:
Yair Dankner,
O. Eyal,
A. Katzir,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 18
页码: 2583-2585
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116191
出版商: AIP
数据来源: AIP
摘要:
The temperature of a thin photoresist layer on a silicon wafer was measuredinsituduring dry etching by using a silver halide optical fiber noncontact thermometer. A two‐bandpass radiometer was constructed to reduce errors arising from geometrical factors and emissivity changes. Such a system may be used to monitor surface temperatures during dry processing of semiconductors and to prevent overheating that may cause damage, such as cross linking of photoresists. ©1996 American Institute of Physics.
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