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Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness

 

作者: K. J. Beernink,   P. K. York,   J. J. Coleman,   R. G. Waters,   J. Kim,   C. M. Wayman,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 21  

页码: 2167-2169

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.102089

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Data are presented on the efficiency, reliability, and temperature dependence of wavelength and threshold for strained‐layer InxGa1−xAs‐GaAs (x∼0.25, &lgr;>1.06 &mgr;m) separate confinement heterostructure lasers for several thicknesses near the critical thickness. Devices with well thicknesses of 100 A˚ exhibit excellent time‐zero characteristics and reliability, while those with 143 A˚ wells have higher initial thresholds and degrade rapidly.

 

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