Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field
作者:
John A. Rogers,
Kateri E. Paul,
Rebecca J. Jackman,
George M. Whitesides,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 20
页码: 2658-2660
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118988
出版商: AIP
数据来源: AIP
摘要:
Bringing an elastomeric phase mask into conformal contact with a layer of photoresist makes it possible to perform photolithography in the near field of the mask. This technique provides an especially simple method for forming features with sizes of 90–100 nm in photoresist: straight lines, curved lines, and posts, on both curved and planar surfaces. It combines experimental convenience, new optical characteristics, and applicability to nonplanar substrates into a new approach to fabrication. Nanowire polarizers for visible light illustrate one application for this technique. ©1997 American Institute of Physics.
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