<m1;40p>Tungsten nitride thin films are prepared with the WF6‐NH3‐H2system by the plasma‐enhanced chemical vapor deposition method. X‐ray diffraction and Auger spectroscopy show that the crystal structure and the composition of tungsten nitride thin films grown at the WF6/NH3ratio of 1 are &bgr;‐phase W2N. The resistivity of W2N is about 190–210 &mgr;&OHgr; cm and it is demonstrated that severe encroachment and SiO2etching during the low‐pressure chemical vapor deposition of tungsten is remarkably suppressed by the predeposition of W2N.