首页   按字顺浏览 期刊浏览 卷期浏览 Effect of barrier thickness asymmetries on the electrical characteristics of AlAs/GaAs ...
Effect of barrier thickness asymmetries on the electrical characteristics of AlAs/GaAs double barrier resonant tunneling diodes

 

作者: A. J. Tsao,   V. K. Reddy,   D. R. Miller,   K. K. Gullapalli,   D. P. Neikirk,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 2  

页码: 1042-1044

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586410

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;IV CHARACTERISTIC;MONOLAYERS;CURRENT DENSITY;COMPUTERIZED SIMULATION;POTENTIAL BARRIER;ASYMMETRY;TUNNEL DIODES;AlAs;GaAs

 

数据来源: AIP

 

摘要:

We report the impact of small barrier thickness asymmetry on the dcI–Vcharacteristics of AlAs/GaAs double barrier resonant tunneling diodes. With a bottom AlAs barrier 6 ML thick and GaAs well 18 ML thick, the effects of varying the top AlAs barrier thickness from 5 to 8 ML produced significant changes in peak current density, peak voltage, and peak‐to‐valley current ratio (PVCR). PVCRs of 5.6 were obtained on a 7/18/6 monolayer structure, the highest reported to date for an AlAs/GaAs DBRTD structure.  

 

点击下载:  PDF (243KB)



返 回