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Roles of a Si insertion layer at GaAs/AlAs heterointerface determined by x‐ray photoemission spectroscopy

 

作者: Y. Hashimoto,   G. Tanaka,   T. Ikoma,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 1  

页码: 125-129

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587168

 

出版商: American Vacuum Society

 

关键词: HETEROSTRUCTURES;INTERFACE PHENOMENA;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;SILICON;BAND STRUCTURE;PHOTOEMISSION;X RADIATION;BINDING ENERGY;GaAs;AlAs;Si

 

数据来源: AIP

 

摘要:

Roles of an ultrathin Si insertion layer in AlAs/Si/GaAs system are studied by usinginsitux‐ray photoemission spectroscopy. It is found that a main role of the Si layer is not a control of a valence band offset as was proposed by Sorbaetal., but an introduction of band bending in an overgrown layer. The proposed band‐bending model explains all the experimental observations in the x‐ray photoemission spectra; an Al 2pline broadening and the dependence of a peak energy shift on the crystallographic orientation and an overgrown‐layer thickness.

 

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