Response to ‘‘Comment on ‘Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron miscroscopy’ ’’ [Appl. Phys. Lett.55, 2147 (1989)]

 

作者: J.‐P. Reithmaier,   H. Cerva,   R. Lo¨sch,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 20  

页码: 2147-2148

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.102086

 

出版商: AIP

 

数据来源: AIP

 

 

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