FIELD‐ENHANCED PHOTOEMISSION FROM LARGE‐AREA Ge DIODES AT LOW TEMPERATURES
作者:
I. G. Davies,
P. R. Thornton,
期刊:
Applied Physics Letters
(AIP Available online 1967)
卷期:
Volume 10,
issue 9
页码: 249-251
ISSN:0003-6951
年代: 1967
DOI:10.1063/1.1754933
出版商: AIP
数据来源: AIP
摘要:
Experimental observations on FEPE from large‐area Ge diodes at low temperatures (∼90°K) are reported. These data include values of the device quantum efficiency as a function of wavelength and bias. An effect is reported in which photon‐induced changes in emissive current are observed at wavelengths up to 2 &mgr;, i.e. well beyond the absorption edge, with efficiencies 4 × 10−5. Aging characteristics associated with this long wavelength effect are described. A tentative suggestion is made that the effect is due to photon‐induced changes in the surface field leading to changes in field emission.
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