Spatial concentrations of silicon atoms by laser‐induced fluorescence in a silane glow discharge
作者:
R. M. Roth,
K. G. Spears,
G. Wong,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 1
页码: 28-30
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94992
出版商: AIP
数据来源: AIP
摘要:
A capacitively coupled, rf glow discharge of silane in argon was studied to determine the spatial concentration of silicon atoms. Laser‐induced fluorescence was used to determine the ground state concentration profiles. The fluorescence profiles clearly show the sharp boundaries of the sheath regions. These profiles were much more sensitive to plasma chemistry changes than profiles obtained from plasma emission. Experiments with nitrogen addition demonstrated significant changes in the silicon atom profiles near the sheath boundary.
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