The minority carrier lifetime ofn‐type 4H‐ and 6H‐SiC epitaxial layers
作者:
O. Kordina,
J. P. Bergman,
C. Hallin,
E. Janze´n,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 5
页码: 679-681
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117804
出版商: AIP
数据来源: AIP
摘要:
The minority carrier lifetime has been measured onn‐type 6H‐ and 4H‐SiC epitaxial layers. We observe inherently longer lifetimes in 4H layers compared to 6H‐SiC layers. A value as high as 2.1 &mgr;s has been measured at room temperature in 4H‐SiC, however, large variations may be observed over the surface. The lifetime increases with temperature and at a typical operating temperature of a device the lifetime is close to 5 &mgr;s. The lifetime appears to be correlated with the morphology of the epitaxial film showing that the lifetime limiting defect may be related to a crystalline imperfection. A strong correlation can also be seen with the thickness of the epitaxial layers. ©1996 American Institute of Physics.
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