Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing
作者:
R. Singh,
K. C. Cherukuri,
L. Vedula,
A. Rohatgi,
S. Narayanan,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 13
页码: 1700-1702
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118674
出版商: AIP
数据来源: AIP
摘要:
In this letter, we have demonstrated phosphorus diffusion into silicon at a temperature of 700 °C using dual spectral source rapid thermal processing (RTP). The optical energy of vacuum ultraviolet irradiation in conjunction with tungsten halogen lamps (light source used in conventional RTP) is responsible for diffusion at low temperatures. Shallow junctions with high surface concentration were formed and no significant degradation in the bulk minority carrier lifetimes was observed. A qualitative explanation for the observed results is offered based on the role of photoeffects in RTP. ©1997 American Institute of Physics.
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