首页   按字顺浏览 期刊浏览 卷期浏览 Effects of annealing on anodic oxides of GaP
Effects of annealing on anodic oxides of GaP

 

作者: Y. Kato,   K. M. Geib,   R. G. Gann,   P. R. Brusenback,   C. W. Wilmsen,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 3  

页码: 1530-1534

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585461

 

出版商: American Vacuum Society

 

关键词: GALLIUM PHOSPHIDES;ANODIZATION;OXIDATION;ANNEALING;SURFACES;TOPOGRAPHY;CHEMICAL COMPOSITION;PHOTOELECTRON SPECTROSCOPY;X RADIATION;HIGH TEMPERATURE;MONOCRYSTALS;WAFERS;N−TYPE CONDUCTORS;P2O5;Ga2O3

 

数据来源: AIP

 

摘要:

The surface topography and the chemical composition of anodic oxides on GaP have been studied. The surface of the as grown anodic oxide was featureless but annealing atT≥600 °C causes the formation of hollow bumps and blisters which increase in size with temperature or duration of the anneal. The oxide composition was investigated by x‐ray photoelectron spectroscopy (XPS) and was found to be a nonuniform mixture of P2O5, Ga2O3, and GaPO4. There is some evaporation of phosphorus oxide near the surface when annealed atT≥300 °C but little or none from the bulk of the oxide film.

 

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