Excimer‐laser‐induced crystallization of hydrogenated amorphous silicon
作者:
K. Winer,
G. B. Anderson,
S. E. Ready,
R. Z. Bachrach,
R. I. Johnson,
F. A. Ponce,
J. B. Boyce,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 21
页码: 2222-2224
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103897
出版商: AIP
数据来源: AIP
摘要:
The electronic transport properties and structural morphology of fast‐pulse excimer‐laser‐ crystallized hydrogenated amorphous silicon (a‐Si:H) thin films have been measured. The room‐temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well‐defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity‐induced reduction of thea‐Si:H melt temperature as the origin of this behavior.
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