Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short‐period superlattices
作者:
K. Fujiwara,
A. Nakamura,
Y. Tokuda,
T. Nakayama,
M. Hirai,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 18
页码: 1193-1195
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97411
出版商: AIP
数据来源: AIP
摘要:
Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1 nm GaAs single quantum well heterostructures (SQWH’s) confined by GaAs/AlAs short‐period superlattices (SPS’s) or ternary AlGaAs alloys with similar Al content, prepared by molecular beam epitaxy. The SQW PL intensity exhibits a single exponential decay with a time constant of 1.6 ns for SQWH’s confined by SPS’s and 0.3 ns for SQWH’s confined by AlGaAs alloys at 77 K. From comparison of the decay rates in both types of the sample, it is found that the radiative recombination efficiency is improved by a factor of about 6 in SPS confined SQWH’s. This higher efficiency is attributed to the improved heterointerfaces in addition to the enhanced radiative recombination rate due to the increased overlap of electron and hole wave functions in the narrow SQW.
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