A complete model for GaSb TPV converters considering multiple real conditions (spectra, temperature, ARC, size, number and characteristics of grid fingers, size of busbar, etc.) is presented. The model has been applied to GaSb TPV converters fabricated in our laboratory by single zinc diffusion. The agreement between theory and experiments is very good. Future guides of performance improvement like the passivation of the surface together with the correspondent structure optimisation and the achievement of a better GaSb quality available more widespread are suggested. © 2003 American Institute of Physics