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Focused ion implantation of gallium arsenide metal–semiconductor field effect transistors with laterally graded doping profiles

 

作者: A. F. Evason,   J. R. A. Cleaver,   H. Ahmed,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 6  

页码: 1832-1835

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584175

 

出版商: American Vacuum Society

 

关键词: ION IMPLANTATION;FABRICATION;MESFET;GALLIUM ARSENIDES;LIQUID METALS;GOLD IONS;PERFORMANCE;ELECTRIC CONDUCTIVITY;POWER;CRYSTAL DOPING;DOPING PROFILES;SILICON IONS;BERYLLIUM IONS;AMPLIFICATION;GaAs

 

数据来源: AIP

 

摘要:

Implantation with finely focused beams of dopant ions scanned under computer control enables laterally graded doping profiles to be formed. A 150‐nm‐diam beam of silicon ions from a gold–silicon–beryllium liquid metal ion source has been used to fabricate GaAs metal–semiconductor field effect transistors (MESFET’s) incorporating a number of different laterally graded doping profiles. It is seen experimentally that, when compared with uniformly implanted devices, these MESFET’s display increased available output power and transductance.

 

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