Rapid thermal annealing of Si‐implanted GaAs with trimethylarsenic overpressure
作者:
S. Reynolds,
D. W. Vook,
W. G. Opyd,
J. F. Gibbons,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 12
页码: 916-918
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98800
出版商: AIP
数据来源: AIP
摘要:
We have developed a novel rapid thermal processor to perform annealing of ion‐implanted GaAs in a trimethylarsenic overpressure. This has allowed study of arsenic ambient annealing in a time/temperature regime not accessible with an arsine furnace. We have compared Si implant activation efficiency and surface degradation for arsenic ambient and proximity capped anneals. The arsenic ambient gives consistently higher activation efficiency with better surfaces.
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