Transient enhanced diffusion (TED) results from implantation damage creating enhanced diffusion of dopants in silicon. This phenomenon has mostly been studied using boron marker layers. We have performed an experiment using boron, phosphorus, and dislocation markers to compare TED effects. This experiment shows that phosphorus is enhanced significantly more than boron during damage annealing. Dislocation growth indicates that a number of interstitials greater than the damage dose is captured during these anneals. The time to saturate the dislocation growth agrees well with phosphorus diffusion saturation, and is greater than the boron saturation. ©1997 American Institute of Physics.