Fabrication technologies for advanced 5X reticles for 16M‐bit dynamic random access memory
作者:
Akira Shigetomi,
Shuichi Matsuda,
Koichi Moriizumi,
Haruhiko Kusunose,
Hiroshi Onoda,
Tadayoshi Imai,
Yaichiro Watakabe,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 2
页码: 117-121
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584836
出版商: American Vacuum Society
关键词: FABRICATION;INTEGRATED CIRCUITS;LITHOGRAPHY;MASKING;ELECTRON BEAMS;COMPUTER−AIDED DESIGN;VLSI;MoSi
数据来源: AIP
摘要:
Fabrication technologies for advanced photomasks with a molybdenum silicide (MoSi) film have been developed by using a variable‐shaped electron‐beam (e‐beam) system. These technologies were applied to the fabrication of 5X reticles for 16M‐bit DRAMs. The variable‐shaped e‐beam system is very effective in increasing the throughput for writing reticles which have a great number of figures, such as 16M‐bit DRAMs. The average writing time was 100 min, which was ∼ (1)/(3) of the time when using a conventional raster‐scan e‐beam system. Photomasks with the MoSi film have advantages in comparison with those with conventional chromium (Cr) film. Pattern defects did not appear during the photomask cleaning because of strong adhesion of the MoSi film to the quartz substrate. Moreover, an accurate feature size on the photomasks was obtained, because the MoSi film was easily dry etched. The feature size accuracy obtained was 0.03 μm in 3σ all over the 5 in. blanks.
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