n‐channel deep‐depletion mode metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) have been fabricated in Si films prepared by zone‐melting recrystallization of chemical‐vapor deposited (CVD) polycrystalline Si deposited on SiO2‐coated Si substrates. The transistors exhibit surface electron mobility in the range of 600–700 cm2/Vs, comparable to values for devices fabricated in single‐crystal Si. Measurements of electron mobility as a function of gate bias voltage indicate that the mobility is nearly constant throughout the depth of the recrystallized Si films. Mobility of 650–700 cm2/Vs at the lower Si‐SiO2interface and subthreshold source‐drain leakage current of a few pA/&mgr;m (channel width) have been measured.