In this paper we report on the observation of acoustoelectric effect (transversal and longitudinal) in the layered structure LiNbO3&sngbnd;Si by means of capacity probes, situated on one side of LiNbO3thin plate with surface acoustic waves propagating along the opposite side adjacent to the Si plate. These effects arise due to the penetration into the silicon plate of the electric fields of the surface acoustic wave propagating along the LiNbO3plate. The transversal effect was revealed to be even (i.e., did not change its sign with a reversal of the direction of surface acoustic wave propagation). The longitudinal effect was revealed to be odd. In high‐conductivity Si samples (&sgr;≥10−4&OHgr;−1cm−1) the transversal effect predominated, in low‐conductivity samples the longitudinal effect predominated. Experimental results on the investigation of the transversal acoustoelectric effect as a function of acoustic intensity, conductivity of the silicon specimen, and dc‐drift electric field are given. The comparison of these results with the theory of acoustoelectric effect in layered structures is carried out.