Tensile‐strained GaAs0.89P0.11/Al0.33Ga0.67As quantum wells have been grown by low‐pressure metalorganic vapor phase epitaxy. The grown samples have been studied by low‐temperature (6 K) and 100 K in‐plane photoluminescence as well as cross‐sectional polarized photoluminescence measurements. The experimental results show the coincident or reversal point of the light‐ and heavy‐hole related transitions at the well width of 60 A˚, above which the low‐temperature photoluminescence is given by the transition 1e–1lh. A theoretical calculation agrees well with the experimental results. ©1995 American Institute of Physics.