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High fluence boron implantation into polymers

 

作者: J. Vacik,   J. Cervena,   D. Fink,   R. Klett,   V. Hnatowicz,   V. Popok,   V. Odzhaev,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1997）
卷期: Volume 143, issue 2  

页码: 139-156

 

ISSN:1042-0150

 

年代: 1997

 

DOI:10.1080/10420159708212955

 

出版商: Taylor & Francis Group

 

关键词: Boron;Polymers;High fluences;Ion implantation;Depth distributions;Nuclear damage;Thermal desorption spectrometry;Diffusion;Surface precipitation;Gettering

 

数据来源: Taylor

 

摘要:

100 keV B+ions are implanted at high fluence into three polymers of technological importance and into a polymeric mixture, respectively. The boron depth distributions are measured by the neutron depth profiling technique. It is shown that the boron atoms redistribute after their implantation according to the nuclear (collisional) energy transfer distribution. This contrasts to low fluence implantation, where the boron atoms redistribute according to their electronic energy transfer distributions.

 

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