We have investigated reactively sputtered films of RuO2for possible application in very large scale integrated circuits. Sputtering yields stoichiometric ruthenium dioxide in a large window of oxygen pressures and the films are reasonably low stressed in the 10−9dyn cm−2range. The resistivity of as deposited films is 40 &mgr;&OHgr; cm. The films are excellent barriers against interdiffusion of Si and Al.