Temperature‐dependent aluminum incorporation in AlxGa1−xAs layers grown by metalorganic vapor phase epitaxy
作者:
W. G. J. H. M. van Sark,
G. J. H. M. Janssen,
M. H. J. M. de Croon,
X. Tang,
L. J. Giling,
W. M. Arnold Bik,
C. P. M. Dunselman,
F. H. P. M. Habraken,
W. F. van der Weg,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 1
页码: 195-199
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341462
出版商: AIP
数据来源: AIP
摘要:
The temperature‐dependent behavior of the solid compositionxsof AlxGa1−xAs has systematically been studied as a function of gas phase compositionxgin an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.
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