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High‐sensitivity depth profiling of arsenic and phosphorus in silicon by means of SIMS

 

作者: K. Wittmaack,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 29, issue 9  

页码: 552-554

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.89181

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Secondary ion mass spectrometry has been used for depth profiling of arsenic and phosphorus in silicon. High‐sensitivity analysis down to concentrations of a few 1017atoms/cm2could be achieved by energy discrimination against mass interfering molecular secondary ions.

 

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