Overlay accuracy of Canon synchrotron radiation stepper XFPA for 0.15 μm process
作者:
K. Saitoh,
H. Ohsawa,
K. Sentoku,
T. Matsumoto,
N. Mizusawa,
Y. Fukuda,
K. Uda,
H. Sumitani,
T. Hifumi,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 4303-4307
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.589041
出版商: American Vacuum Society
关键词: SiN
数据来源: AIP
摘要:
Canon has been developing a synchrotron radiation stepper system for x‐ray lithography feasibility studies. We have developed a novel accurate alignment system using the dual grating lens (DGLs) method. In this article, we explain the principle of the DGL, and the results of the alignment accuracy and process applicability tests. We have evaluated alignment performance for translation (X,Y) and rotation (θ) at the center of every exposure area. We obtained the alignment accuracy 3σ of 19 nm (X), 15 nm (Y) and 0.8 μrad (θ), using etched SiN patterns on Si substrates, and the overlay accuracy in an actual dynamic random access memory fabrication process 3σ of 34 nm (X), 31 nm (Y), and 2.1 μrad (θ). After eliminating the alignment offset in each shot, the values (3σ) are 18 nm, 21 nm, 1.4 μrad, respectively. These results show that the alignment method is promising for 0.15 μm level device fabrication.
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