Nitrogen and aluminum implantation in high resistivity silicon carbide
作者:
Deborah Dwight,
Mulpuri V. Rao,
O. W. Holland,
G. Kelner,
P. H. Chi,
J. Kretchmer,
M. Ghezzo,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 11
页码: 5327-5333
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366299
出版商: AIP
数据来源: AIP
摘要:
In this article, the results on N and Al implantations into undoped high-resistance and vanadium doped semi-insulating bulk 6H-SiC are reported for the first time. The N implants were performed at 700 °C and the Al implants at 800 °C to createn- andp-type layers, respectively. For comparison, implants were performed into epitaxial layers at the above temperatures and, for N, also at room temperature. The implanted/annealed material was characterized by van der Pauw Hall, secondary ion mass spectrometry, and Rutherford backscattering (RBS) measurements. After annealing, the room temperature N implantation gave similar electrical and RBS results as the 700 °C implantation for a total implant dose of8×1014 cm−2which corresponds to a volume concentration of2×1019 cm−3.The Al implant redistributed in the bulk crystals during annealing, resulting in a shoulder formation at the tail of the implant profile. Lower implant activation was obtained in V-doped material compared to the undoped bulk and epitaxial layers, but the results were promising enough to use implantation technology for making planar high frequency devices in the bulk V-doped substrates, especially as the quality of the substrates continue to improve. ©1997 American Institute of Physics.
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