Effect of rf power on the growth and electrical properties of SrBi2Ta2O9thin films by plasma-enhanced metalorganic chemical vapor deposition
作者:
Woong-Chul Shin,
Soon-Gil Yoon,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 26,
issue 1-4
页码: 153-161
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215619
出版商: Taylor & Francis Group
关键词: nonvolatile random access memory (NVRAM);ferroelectric;rf plasma;PEMOCVD
数据来源: Taylor
摘要:
The SBT films were deposited on Pt/Ti/SiO2/Si substrates at 550°C by plasma-enhanced metalorganic chemical vapor deposition (PEMOCVD). The films were evaluated with different rf plasma power and showed a complete single phase with highly oriented (115) texture without fluorite phase at rf power of 100 W. The SBT films deposited at 100 W have a dielectric constant of 270 and dissipation factor of 0.04 at 100 kHz. The leakage current density of films prepared at 100 W was about 3.0 × 10−8A/cm2at 170 kV/cm. The SBT films deposited at 100 W by PEMOCVD showed enough dielectric and leakage properties to apply for nonvolatile memory devices.
点击下载:
PDF (413KB)
返 回