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Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (&lgr;∼910 nm)

 

作者: J. S. Major,   L. J. Guido,   K. C. Hsieh,   N. Holonyak,   W. Stutius,   P. Gavrilovic,   J. E. Williams,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 10  

页码: 913-915

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.100806

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The stability of strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs single quantum well heterostructures against thermal processing is examined using transmission and scanning electron microscopy. A self‐aligned impurity‐induced layer disordering process employing Si‐O diffusion is used to produce buried heterostructure stripe geometry lasers with a pseudomorphic InxGa1−xAs quantum well active region. The 2‐&mgr;m‐wide stripe laser diodes exhibit high efficiency (&eegr;∼41%/facet), low threshold (Ith=7 mA), and high output power (Pout>20 mW/facet).

 

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