Electrically conductingLaNiO3(LNO) thin layers were deposited on(100)SrTiO3(STO) and(100)LaAlO3(LAO) substrates and crystallized at temperatures between 700 and 800 °C. The chemical method of deposition was solution sol-gel processing. X-ray 2&thgr; and rocking curve measurements, &fgr; scans, and atomic force microscopy studies revealed the degree of crystallinity and heteroepitaxy for the integrated electrodes. The full-width at half-maximum for (100) LNO deposited on LAO and STO was 0.16° and 0.25°, respectively. Surface bonding states and chemistry were examined by x-ray photoelectron spectroscopy. The room temperature resistivity of LNO electrodes deposited on STO and LAO was 460 and 340 &mgr;&OHgr; cm, respectively. ©1997 American Institute of Physics.