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Structure and magnetism of the Fe/GaAs interface

 

作者: A. Filipe,   A. Schuhl,   P. Galtier,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 70, issue 1  

页码: 129-131

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119284

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We study the magnetic properties of Fe thin films epitaxially grown on GaAs (001) for a large range of substrate temperature. Magnetization deficiency has been observed and studied. Its dependence on both thickness and temperature clearly show the existence of a nearly half-magnetized phase at the interface, covered by “as-bulk” Fe. Furthermore, reflection high-energy electron diffraction studies show a transition between two bcc structures with different crystalline parameters. Transmission electron microscopy confirms the formation of this interfacial phase, for which the compoundFe3Ga2−xAsxseems to be the best candidate. ©1997 American Institute of Physics.

 

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