Structure and magnetism of the Fe/GaAs interface
作者:
A. Filipe,
A. Schuhl,
P. Galtier,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 1
页码: 129-131
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119284
出版商: AIP
数据来源: AIP
摘要:
We study the magnetic properties of Fe thin films epitaxially grown on GaAs (001) for a large range of substrate temperature. Magnetization deficiency has been observed and studied. Its dependence on both thickness and temperature clearly show the existence of a nearly half-magnetized phase at the interface, covered by “as-bulk” Fe. Furthermore, reflection high-energy electron diffraction studies show a transition between two bcc structures with different crystalline parameters. Transmission electron microscopy confirms the formation of this interfacial phase, for which the compoundFe3Ga2−xAsxseems to be the best candidate. ©1997 American Institute of Physics.
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