From measurements of the sheet conductivity and the Hall effect in combination with layer stripping by chemical etching, we have evaluated the doping profiles of ion‐implanted PbTe. By using thin films grown epitaxially on insulating substrates, we avoided difficulties with the formation of an insulatingp‐njunction. The carrier profiles of samples implanted in a random direction are deeper and broader than those of the LSS theory. The charge‐carrier profiles associated with the implantation damage show a constant value of the maximum concentration largely independent of the implantation dose and the ions used.